InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Chemical Vapor DepositionEnglish Full Text
Yang Guowen Xu Zuntu Ma Xiaoyu Xu Junying Zhang Jingming Chen Lianghui (Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083)
Abstract: Abstract Aluminum free strained In 0.2 Ga 0.8 As/GaAs/In 0.49 Ga 0.51 P single quantum well lasers with an emission wavelength of 985nm are presented. The laser material was grown by metalorganic chemical vapor deposition. An extremely low threshold current density of 150A/cm 2 is obtained for 100μm wide stripe lasers having a cavity length of 800μm. The internal quantum efficiency and the internal loss are 78% and 5cm -1 , respectively. T... More
- Series：
(I) Electronic Technology ＆ Information Science
- Subject：
Wireless Electronics
- Classification Code：
TN405.986
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