Design and Research of Filter Based on Scandium Aluminum Nitride-based FBARChinese Full Text
HUANG Liangwen;LV Shitao;SUN Haiyan;ZHAO Jicong;TAO Yujuan;School of Information and Science Technology, Nantong University;Jiangsu Key Laboratory of ASIC Design, Nantong University;Tongfu Microelectronics Co., Ltd.;
Abstract: A thin-film bulk acoustic resonator filter operating in the 2.11-2.18 GHz frequency band was designed in this paper. Based on finite element simulation, a thin film bulk acoustic resonator doped with scandium aluminum nitride was studied, and the effect of scandium doping on the performance of the resonator was analyzed. An optimized design scheme for electrode frame structure was proposed, which improves the effective electro-mechanical coupling coefficient and the quality factor values of the ... More
Keywords:
thin-film bulk acoustic resonator; scandium aluminum nitride; MBVD equivalent electrical model; multi-layer spiral inductance;
- DOI:
10.19623/j.cnki.rpsse.2023.06.003
- Series:
(I) Electronic Technology & Information Science
- Subject:
Wireless Electronics
- Classification Code:
TN713;TN751.2
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